Below are the articles published in 2014
Binary metal oxide surface goes electrocatalytic
September 5th, 2014Rice researchers developed an inexpensive simple way to fabricate binary metal oxides with active edges for electrocatalytic reactions. James Tour, the T.T. and W.F. Chao Professor of Chemistry, professor of computer science and of materials science and nanoengineering, is quoted. Nanotechweb.org
Tour Testifies Before Congressional Committee
August 4th, 2014In a span of less than two weeks, Rice’s Neal Lane, James Tour, John Diamond and Charles McConnell testified before separate congressional committees on Capitol Hill in Washington, D.C. At the same time, 25 Rice students were wrapping up summer internships on the Hill. http://news.rice.edu/2014/08/04/rice-busy-on-capitol-hill/
Resistance is not futile: Here’s a cookie sheet of luke-warm RRAM that proves it
July 29th, 2014Rice’s silicon oxide technology can now be used to fabricate devices with conventional production methods, which brings it a step closer to mass production. James Tour, the T.T. and W.F. Chao Professor of Chemistry, professor of computer science and of materials science and nanoengineering, is quoted. The Register http://www.theregister.co.uk/2014/07/29/porous_silicon_makes_rram_faster_cheaper_and_better/
Soon we’ll be able to store terabytes worth of data on our smartphones
July 28th, 2014New, super dense memory chips may arrive soon
July 28th, 2014Myce (This article also appeared in TweakTown.) http://www.myce.com/news/new-super-dense-memory-chips-may-arrive-soon-72279/
Weekend tech reading: Oculus Rift DK2 and OS X Yosemite previewed, Destiny compared on PS4/XO
July 28th, 2014The morning download: Hilton upgrades to mobile-first
July 28th, 2014Rice’s silicon oxide technology can now be used to fabricate devices with conventional production methods, which brings it a step closer to mass production. James Tour, the T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and materials science and of computer science, is quoted. Wall Street Journal http://on.wsj.com/1pvOwhb http://blogs.wsj.com/cio/2014/07/28/the-morning-download-hilton-upgrades-to-mobile-first/
Super-Dense Computer Memory – MIT Technology Review
July 28th, 2014http://www.technologyreview.com/news/529386/super-dense-computer-memory/
Rice University chemist to testify about nanotechnology
July 28th, 2014James Tour, the T. T. and W. F. Chao Chair in Chemistry and professor of mechanical engineering and materials science and of computer science, is quoted; he will testify before the Energy and Commerce Subcommittee on commerce, manufacturing and trade. AZoNano.com http://www.azonano.com/news.aspx?newsID=30719
Tech universe: July 17, 2014
July 17th, 2014New Zealand Herald http://www.nzherald.co.nz/technology/news/article.cfm?c_id=5&objectid=11294878
Nanoporous oxide makes good memory device
July 17th, 2014Rice’s silicon oxide technology can now be used to fabricate devices with conventional production methods, which brings it a step closer to mass production. James Tour, the T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and materials science and of computer science, is quoted. Nanotechweb.org http://bit.ly/1nAni7M http://nanotechweb.org/cws/article/tech/57925
Nanoporous silicon oxide is back in the race for resistive memory
July 16th, 2014Rice’s silicon oxide technology can now be used to fabricate devices with conventional production methods, which brings it a step closer to mass production. James Tour, the T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and materials science and of computer science, is quoted. IEEE Spectrum http://bit.ly/1rr1r7G http://spectrum.ieee.org/nanoclast/semiconductors/memory/nanoporous-version-of-silicon-oxide-brings-it-back-into-the-race-for-resistive-memory
Potential replacement for flash memory gets a boost
July 14th, 2014Rice researchers have improved the use of Resistive Random Access Memory to replace flash memory. Overclockers Club http://www.overclockersclub.com/news/36578/
Rice employs nanoporous silicon-oxide material in new RRAM memory devices
July 11th, 2014Rice’s silicon oxide technology can now be used to fabricate devices with conventional production methods, which brings it a step closer to mass production. James Tour, the T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and materials science and of computer science, is quoted. AZonano.com (This article also appeared in HardOCP, Rice’s silicon oxide memories catch manufacturers’ eye-Rice NewsJuly 10th, 2014
Rice University’s breakthrough silicon oxide technology for high-density, next-generation computer memory is one step closer to mass production, thanks to a refinement that will allow manufacturers to fabricate devices at room temperature with conventional production methods. http://bit.ly/1nhWTQE http://news.rice.edu/2014/07/10/rices-silicon-oxide-memories-catch-manufacturers-eye/
Rice’s silicon oxide memories catch manufacturers’ eye
July 10th, 2014Rice’s silicon oxide technology can now be used to fabricate devices with conventional production methods, which brings it a step closer to mass production. James Tour, the T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and materials science and of computer science, is quoted. Phys.org http://phys.org/news/2014-07-rice-silicon-oxide-memories-eye.html
Rice research papers ranked among top 10 most read in ACS Nano
March 17th, 2014James Tour, the T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and materials science and of computer science; alumna Daniela Marcano ’11; and Naomi Halas the Stanley C. Moore Professor in Electrical and Computer Engineering and director of Rice’s Laboratory for Nanophotonics and professor of physics and astronomy, are featured for […]
